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SEMICONDUCTOR COMPONENT ANALYZER

DCA55
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Features

  • automatic component type identification
  • automatic pinout identification
  • special feature identification such as protection diodes and resistor shunts
  • bipolar transistors: gain and leakage current measurements, silicon and germanium detection
  • gate threshold measurement for Enhancement Mode MOSFETs
  • semiconductor forward voltage measurement for diodes, LEDs and
    transistor Base-Emitter junctions
  • automatic and manual power-off

Specifications

  • Specification Summary at 20°C (68°F) unless otherwise specified
  • peak test current into short circuit: -5.5 mA to 5.5 mA
  • peak test voltage across open circuit: -5.1 V to 5.1 V
  • transistor:
    • gain range (Hfe): 4 - 65 000
    • gain accuracy: ± 3% ± 5 Hfe
    • Vceo test voltage: 2.0 V - 3.0 V
    • Vbe accuracy: -2% -20 mV to +2% + 20 mV
    • VBE for Darlington (shunted): 0.95 V - 1.80 V (0.75 V - 1.80 V)
    • base-emitter shunt threshold: 50 kΩ - 70 kΩ
    • BJT collector test current: 2.45 mA - 2.55 mA
    • BJT acceptable leakage: 0.7 mA
    • MOSFET:
      • gate threshold range: 0.1 V - 5.0 V
      • threshold accuracy: -2% -20 mV to +2% +20 mV
      • drain test current: 2.45 mA - 255 mA
      • gate resistance: 8 kΩ
    • depletion drain test current: 4.5 mA
    • JFET drain-source test current: 0.5 mA - 5.5 mA
  • SCR/Triac:
    • gate test current: 4.5 mA
    • load test current: 5.0 mA
  • diode:
    • test current: 5.0 mA
    • voltage accuracy: -2% -20 mV to +2% +20 mV
    • Vf for LED identification: 1.50 V - 4.00 V
    • short circuit threshold: 10 Ω
  • battery:
    • type: MN21 / L1028 / GP23A 12 V alkaline
    • voltage range: 7.50 V - 12 V
    • warning threshold: 8.25 V
  • dimensions: 103 x 70 x 20 mm (4.1" x 2.8" x 0.8")
  • Weight per product (nett): 0.098kg (3.5oz)
  • Operating temperature range: 0°C~50°C (32F ~ 122F)

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